C2335 NEC
www.DataSheet4U.com
DATA SHEET
SILICON POWER TRANSISTOR
2SC2335
NPN SILICON TRIPLE DIFFUSED TRANSISTOR FOR HIGH-SPEED HIGH-VOLTAGE SWITCHING
The 2SC2335 is a mold power transistor developed for high-speed high-voltage switching, and is ideal for use as a driver in devices such as switching regulators, DC/DC converters, and high-frequency power amplifiers.
FEATURES
- Low collector saturation voltage: VCE(sat) = 1.0 V MAX. @IC = 3.0 A
- Fast switching speed: tf = 1.0 µ s MAX. @IC = 3.0 A
- Wide base reverse-bias SOA: VCEX(SUS)1 = 450 V MIN. @IC = 3.0 A
ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C)
| Parameter | Symbol | Conditions | Ratings | Unit |
|---|---|---|---|---|
| Collector to base voltage | V CBO | 500 | V | |
| Collector to emitter voltage | V CEO | 400 | V | |
| Emitter to base voltage | V EBO | 7.0 | V | |
| Collector current (DC) | I C(DC) | 7.0 | A | |
| Collector current (pulse) | I C(pulse) | PW ≤ 300 µ s, duty cycle ≤ 10% | 15 | A |
| Base current (DC) | I B(DC) | 3.5 | A | |
| Total power dissipation | P T | T C = 25 ° C | 40 | W |
| T A = 25 ° C | 1.5 | W | ||
| Junction temperature | T j | 150 | ° C | |
| Storage temperature | T stg | - 55 to +150 | ° C |
Table Caption: This table lists the electrical and thermal characteristics of a semiconductor device, including voltage, current, and power ratings under specified conditions, along with temperature limits. It provides key parameters for understanding the operational capabilities and limitations of the component.
ORDERING INFORMATION
| Part No. | Package |
|---|---|
| 2SC2335 | TO-220AB |
Table Caption: This table lists electronic component part numbers and their corresponding package types. It shows that part number 2SC2335 is available in a TO-220AB package.
(TO-220AB)
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.
ELECTRICAL CHARACTERISTICS (TA = 25 ° C)
| Parameter | Symbol | Conditions | MIN. | TYP. | MAX. | Unit |
|---|---|---|---|---|---|---|
| Collector to emitter voltage | V CEO(SUS) | I C = 3.0 A, I B1 = 0.6 A, L = 1 mH | 400 | V | ||
| Collector to emitter voltage | V CEX(SUS)1 | I C = 3.0 A, I B1 = - I B2 = 0.6 A, V BE(OFF) = - 5.0 V, L = 180 µ H, clamped | 450 | V | ||
| Collector to emitter voltage | V CEX(SUS)2 | I C = 6.0 A, I B1 = 2.0 A, - I B2 = 0.6 A, V BE(OFF) = - 5.0 V, L = 180 µ H, clamped | 400 | V | ||
| Collector cutoff current | I CBO | V CB = 400 V, I E = 0 A | 10 | µ A | ||
| Collector cutoff current | I CER | V CE = 400 V, R BE = 51 Ω , T A = 125 ° C | 1.0 | mA | ||
| Collector cutoff current | I CEX1 | V CE = 400 V, V BE(OFF) = - 1.5 V | 10 | µ A | ||
| Collector cutoff current | I CEX2 | V CE = 400 V, V BE(OFF) = - 1.5 V, T A = 125 ° C | 1.0 | mA | ||
| Emitter cutoff current | I EBO | V EB = 5.0 V, I C = 0 A | 10 | µ A | ||
| DC current gain | h FE1 | V CE = 5.0 V, I C = 0.1 A Note | 20 | 80 | ||
| DC current gain | h FE2 | V CE = 5.0 V, I C = 1.0 A Note | 20 | 80 | ||
| DC current gain | h FE3 | V CE = 5.0 V, I C = 3.0 A Note | 10 | |||
| Collector saturation voltage | V CE(sat) | I C = 3.0 A, I B = 0.6 A Note | 1.0 | V | ||
| Base saturation voltage | V BE(sat) | I C = 3.0 A, I B = 0.6 A Note | 1.2 | V | ||
| Turn-on time | t on | I C = 3.0 A, R L = 50 Ω , | µ s | |||
| Storage time | t stg | I B1 = - I B2 = 0.6 A, V CC ≅ 150 V | 2.5 | µ s | ||
| Fall time | t f | Refer to the test circuit. | 1.0 | µ s |
Table Caption: This table details the electrical characteristics of a semiconductor component, listing various parameters such as voltage, current, gain, and timing under specific operating conditions and temperature ranges. It provides minimum, typical, and maximum values for each parameter.
Note Pulse test PW ≤ 350 µ s, duty cycle ≤ 2%
hFE CLASSIFICATION
| Marking | M | L | K |
|---|---|---|---|
| h FE2 | 20 to 40 | 30 to 60 | 40 to 80 |
Table Caption: This table shows the range of values for markings M, L, and K, with h FE2 indicating the specific context or condition under which these ranges apply.
SWITCHING TIME (ton, tstg, tf) TEST CIRCUIT
TYPICAL CHARACTERISTICS (TA = 25 ° C)
DERATING CURVE OF SAFE OPERATING AREAS
REVERSE BIAS SAFE OPERATING AAEAS
